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| CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT PNP General Purpose Transistor VOLTAGE 30 Volts APPLICATION * AF input stages and driver applicationon equipment. * Other general purpose applications. CHT858BWPT CURRENT 0.1 Ampere FEATURE * Surface mount package. (SC-70/SOT-323) * High current gain. * Suitable for high packing density. * Low colloector-emitter saturation. * High saturation current capability. (2) (3) SC-70/SOT-323 1.30.1 0.30.1 0.65 2.00.2 0.65 (1) MARKING * HFE(Q):RW * HFE(R):RX * HFE(S):RY 1.250.1 0.05~0.2 0.1Min. 0.8~1.1 0~0.1 2.0~2.45 CIRCUIT 1 3 2 Dimensions in millimeters SC-70/SOT-323 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL V CBO V CEO VEBO IC PC PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) Collector power dissipation Note.2 Tstg Tj Note 1. Transistor mounted on an FR4 printed-circuit board. 2. When mounted on a aX5X0.6mm ceramic board storage temperature junction temperature CONDITIONS open emitter open base open collector - - - - - - -55 - MIN. MAX. -30 -30 -5 -0.1 0.2 0.35 +150 150 C C 2004-10 UNIT V V V A W RATING CHARACTERISTIC ( CHT858BWPT) THERMAL CHARACTERISTICS CHARACTERISTICS Tamb = 25 C unless otherwise specied. SYMBOL I CBO BVCBO BVCEO BVEBO hFE VCEsat VBE(on) Cob fT Note 1. Pulse test: t p 300 s; 0.02. 2. hFE: Classification Q: 125 to 250, R: 220 to 475, S: 420 to 800 PARAMETER collector cut-off current CONDITIONS IE = 0; VCB = 30 V MIN. - -30 -30 -5 125 - - -0.6 - - Typ. - - - - - - - - 4.5 200 MAX. 15 - - - UNIT nA V V V collector-base breakdown voltage IC =-10uA collector-emitter breakdown voltage IC =-10mA IE =-1uA emitter-base breakdown voltage VCE /I C =-5V/-2 mA current transfer ratio DC IC = -10 mA ; I B = -0.5 mA collector-emitter saturation IC = -100 mA ; I B = -5 mA voltage base-emitter satur ation voltage collector output capacitance transition frequency IC = -10 mA;VCE = -5.0 V IE = 0; VCB = -10V ; f = 1 MH z IE = 20 mA; VCE = - 5 V ; f = 100 MHz 800 -300 mV -650 mV V -0.75 - - pF MHz RATING CHARACTERISTIC CURVES ( CHT858BWPT) fig1.Grounded emmitter output characteristics (1) 100 COLLECTOR CURRENT : Ic (mA) 80 60 40 20 iB=0mA 0 0 0.7 0.5 0.4 0.3 0.2 0.1 1.0 COLLECTOR-EMITTER VOLTAGE : VCE(V) Ta=25 C 2.0 O fig2.Grounded emmitter output characteristics (2) COLLECTOR CURRENT : Ic (mA) 10 50 0.6 Ta=25 C O 8.0 6.0 4.0 2.0 0 0 45 40 35 30 25 20 15 10 5 IB=0uA 1.0 COLLECTOR-EMITTER VOLTAGE : V (V) CE 2.0 RATING CHARACTERISTIC CURVES ( CHT858BWPT) fig3.DCcurrent gain VS. collector current (1) 500 Ta=25 C VCE=10V hFE-DC CURRENT GAIN hFE-DC CURRENT GAIN 100 1V 5V 100 Ta=125 C O Ta=25 O C Ta=-55 C O O fig4.DCcurrent gain VS. collector current (2) 500 Ta=25 C O 10 5 0.1 100 10 1 I C - COLLECTOR CURRENT (mA) 1000 10 5 0.1 10 100 1 I C - COLL ECTOR CURRENT (mA) 1000 VCE(SAT)COLLECTOR EMITTER SATURATION fig5.AC current gain VS. collector current 500 hFE-AC CURRENT GAIN Ta=25 C VCE=5V f=1KHZ O fig6.Collector-emitter saturation voltage VS. collector current 0.3 VOLTAGE (V) Ta=25 C IC/IB=10 O 100 0.2 0.1 10 5 0.01 0 0.1 0.1 1.0 10 100 I C - COLLECTO R CURRENT (mA) 10 1.0 I C - COLLECTO R CURRENT (mA) 100 VBE(Sat)BASE EMITTER SATURATION VOLTAGE (V) 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0.1 VBE(ON)BASE EMITTER VOLTAGE (V) fig7.Bass-emitter saturation voltage VS. collector current Ta=25 C IC/IB=10 O fig8.Grounded emitter propagation characteristics 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0.1 Ta=25 C VCE=10V O 1.0 10 I C - COLLECTOR CURRENT (mA) 100 1.0 10 I C - COLLECTOR CURRENT (mA) 100 RATING CHARACTERISTIC CURVES ( CHT858BWPT) fig9.Input/output capacitance VS. voltage 100 CAPAITANCE(pF) Ta=25 C f=1MHZ O ft-CURRENT GAIN-BANDWIDTH PRODUCT (MHZ) fig10.Gain bandwidth product VS. collector current 1000 Ta=25 C VCE=5V O Cib 10 Cob 100 1 0.5 1 10 REVERSE BIAS VOLTAGE(V) 50 10 0.5 1 10 100 500 Ic-COLLECTOR CURRENT (mA) |
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